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The effect of annealing and hydrogenation on the dislocation conduction in silicon

✍ Scribed by Kveder, V. V. ;Osipyan, Yu. A. ;Sagdeev, I. R. ;Shalynin, A. I. ;Zolotukhin, M. N.

Publisher: John Wiley and Sons
Year: 1985
Tongue: English
Weight: 572 KB
Volume: 87
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210870230

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