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The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films

โœ Scribed by Jung-Hwan Oh; Byung-Jun Oh; Doo-Jin Choi; Geung-Ho Kim; Hue-Sup Song

Book ID
110362185
Publisher
Springer
Year
2001
Tongue
English
Weight
975 KB
Volume
36
Category
Article
ISSN
0022-2461

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Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition
โœ M. Soueidan; G. Ferro; B. Nsouli; F. Cauwet; J. Dazord; G. Younes; Y. Monteil ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 994 KB

Epitaxial 3C-SiC(1 1 1) films were grown on 6H-SiC(0 0 0 1) Si face on axis substrates by chemical vapor deposition under H 2 , SiH 4 and C 3 H 8 in a cold wall vertical reactor. Two temperatures were studied (1450 and 1700 โ€ข C) with various C/Si ratio and deposition time. It was found that under co