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The effect of InAs quantum layer and quantum dots on the electrical characteristics of GaAs structures

✍ Scribed by L Dózsa; Zs.J Horváth; Vo Van Tuyen; B Pődör; T Mohácsy; S Franchi; P Frigeri; E Gombia; R Mosca

Book ID
114155991
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
272 KB
Volume
51-52
Category
Article
ISSN
0167-9317

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✍ J.C. Rimada; M. Prezioso; L. Nasi; E. Gombia; R. Mosca; G. Trevisi; L. Seravalli 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 634 KB

In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening i