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The effect of gate overlap lightly doped drains on low temperature poly-Si thin film transistors

โœ Scribed by Jaehyun Cho; Sungwook Jung; Kyungsoo Jang; Hyungsik Park; Jongkyu Heo; Wonbaek Lee; DaeYoung Gong; Seungman Park; Hyungwook Choi; Hanwook Jung; Byoungdeog Choi; Junsin Yi


Book ID
113800594
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
784 KB
Volume
52
Category
Article
ISSN
0026-2714

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Stacked gate insulator of photooxide and
โœ Yukihiko Nakata; Tetsuya Okamoto; Takashi Itoga; Toshimasa Hamada; Yutaka Ishii ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 1019 KB

A stacked gate insulator consisting of photooxide and PECVD film prepared from SiH 4 and N 2 O for use in low-temperature poly-Si thin-film transistors has been developed. The rate of photooxidation using a Xe excimer lamp is the same for (100) and (111) single-crystal Si wafers, and SiO 2 with good