Analysis of electrical characteristics of gate overlapped lightly doped drain (GOLDD) polysilicon thin-film transistors with different LDD doping concentration

✍ Scribed by Bonfiglietti, A.; Cuscuna, M.; Valletta, A.; Mariucci, L.; Pecora, A.; Fortunato, G.; Brotherton, S.D.; Ayres, J.R.

• Book ID: 114617254
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 672 KB
• Volume: 50
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2003.819250