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The effect of dose rate on ion implanted impurity profiles in silicon

✍ Scribed by S. Tian; S.-H. Yang; S. Morris; K. Parab; A.F. Tasch; D. Kamenitsa; R. Reece; B. Freer; R.B. Simonton; C. Magee

No coin nor oath required. For personal study only.

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