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Effect of Ge-related mechanical strain on defect and impurity behaviour in ion-implanted silicon

✍ Scribed by Yu. Suprun-Belevich; L. Palmetshofer

Book ID: 113286826
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 476 KB
Volume: 106
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(95)00715-6

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