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The effect of deep states on the photovoltaic performance of CdZnS/CuInSe2 thin film devices

✍ Scribed by R.K. Ahrenkiel

Publisher
Elsevier Science
Year
1986
Weight
646 KB
Volume
16
Category
Article
ISSN
0379-6787

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✦ Synopsis

High densities of both bulk and interface states were found in CdZnS/ CuInSe2 thin film devices. Deep level transient spectroscopy studies showed that air baking removes minority carrier levels at 39 meV and 78 meV. Light induced capacitance indicated that charging of deep interface states reduced the CuInSe2 diffusion potential. A model was proposed using interface recombination as the only diode current mechanism. This model relates interface state charging to a reduced open-circuit voltage.

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