High densities of both bulk and interface states were found in CdZnS/ CuInSe2 thin film devices. Deep level transient spectroscopy studies showed that air baking removes minority carrier levels at 39 meV and 78 meV. Light induced capacitance indicated that charging of deep interface states reduced t
β¦ LIBER β¦
Effect of annealing on the surface and band gap alignment of CdZnS thin films
β Scribed by T. Prem Kumar; S. Saravanakumar; K. Sankaranarayanan
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 714 KB
- Volume
- 257
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The effect of deep states on the photovo
β
R.K. Ahrenkiel
π
Article
π
1986
π
Elsevier Science
β 646 KB
Effect of annealing on the electrical pr
β
MA Afifi; NA Hegab; AE Bekheet
π
Article
π
1995
π
Elsevier Science
π
English
β 409 KB
Disorder Effects on the Gap of Thin Si N
β
S. MΓ©nard; A. SaΓΊl; F. Bassani; F. Arnaud d'Avitaya
π
Article
π
1999
π
John Wiley and Sons
π
English
β 169 KB
π 2 views
The gap of Si nanocrystalline films has been computed using a non-orthogonal tight-binding approach. We have studied the influence of different types of disorder: inter-grain distance, intergrain misorientation, and film roughness on the gap value of these Si films. In all the cases, the variation o
Effects of Annealing on the Properties o
β
S. Heutz; G. Salvan; T.S. Jones; D.R.T. Zahn
π
Article
π
2003
π
John Wiley and Sons
π
English
β 184 KB
π 3 views
Effect of oxygen deficiency on optical b
β
Y. Chen; X.L. Xu
π
Article
π
2011
π
Elsevier Science
π
English
β 234 KB
Effect of electrode annealing on the agi
β
A. R. Patel; N. C. Pandya; N. C. Chourasia; G. K. Shivakumar
π
Article
π
1982
π
John Wiley and Sons
π
English
β 302 KB
π 2 views