Some observations on the effect of evaporation source temperature on the composition of CuInSe2 thin films
β Scribed by R.D. Tomlinson; D. Omezi; J. Parkes; M.J. Hampshire
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 190 KB
- Volume
- 65
- Category
- Article
- ISSN
- 0040-6090
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π SIMILAR VOLUMES
Thin films of InSe were obtained by thermal evaporation techniques on glass substrates maintained at various temperatures (T sb = 30Β°, 400Β°C). X-ray diffraction analysis showed the occurrence of amorphous to polycrystalline transformation in the films deposited at higher substrate temperature (400Β°C
Using CuI1i~Se3.5 as source material epitaxial layers are obtained on (111)A-und (100)oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 720-870 K. Tho composition of the films is between CuInSe, and C~In~Se3.5. The structural properties of the films are similar