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Influence of source composition on the properties of flash-evaporated thin films in the Cu–In–Se system

✍ Scribed by Doz. Dr. sc. H. Neumann; Dr. B. Schumann; Dipl.-Phys. E. Nowak; A. Tempel; Doz. Dr. sc. G. Kühn

Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
434 KB
Volume
18
Category
Article
ISSN
0232-1300

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✦ Synopsis

Using CuI1i~Se3.5 as source material epitaxial layers are obtained on (111)A-und (100)oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 720-870 K. Tho composition of the films is between CuInSe, and C~In~Se3.5. The structural properties of the films are similar to those for CuInSe, epitaxial layers and refer to a chalcopyrite-like structure. The films are always p-type conducting but different acceptor states are found in dependence on the substrate temperature.

Unter Verwendung von CuIri,Ses 5 als Quellmaterial ergeben sich Inittels Flash-Verdampfung epitaktische Schichten auf (1 11)A-und (100)-orientierten GaAs-Substraten im Substrattemperaturbereich Tsub = 720 -870 K. Die Zusammensetzung der Schichten liegt zwischen CuInSe, und CuIn,Ses 5 . Die strukturellen Eigenschaften der Schichten ahneln denen von CuInSe,-Epitaxieschichten und deuteii auf eine chalkopyritahnliche Struktur hin. Die Schichten sind stets p-leitend, jedoch findet man in Abhangigkeit voii der Substratternperatur unterschiedliche Akzeptorzustande.

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