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Influence of the Oxygen Partial Pressure on the Opto-Electrical Properties of ZnO Thin Films Deposited by Reactive Evaporation

✍ Scribed by G. Gordillo; J. Olarte; C. Calderón


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
117 KB
Volume
220
Category
Article
ISSN
0370-1972

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Influence of the Oxygen Partial Pressure
✍ Jiang, J.C. ;Li, B. ;Zhang, Z.Q. ;Hu, P.G. ;Zhang, F.S. ;Cheng, H.S. ;Yang, F.J. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB 👁 2 views

Quantitative depth profiling and compositional analysis of oxygen in TiO x film deposited on K9 glass was carried out using the resonant elastic scattering 16 O(a, a) 16 O at 3.045 MeV. By means of the resonance yield, the oxygen concentration in TiO x films as well as the oxygen-to-metal stoichiome