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On the growth of CuInS2 thin films by three-source evaporation

โœ Scribed by Y.L. Wu; H.Y. Lin; C.Y. Sun; M.H. Yang; H.L. Hwang

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
530 KB
Volume
168
Category
Article
ISSN
0040-6090

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๐Ÿ“œ SIMILAR VOLUMES

Growth and electrical properties of epit
Growth and electrical properties of epitaxial CuInS2 thin films on GaAs substrates
โœ Doz. Dr. sc. H. Neumann; Dr. B. Schumann; Dipl.-Phys. D. Peters; Dr. A. Tempel; ๐Ÿ“‚ Article ๐Ÿ“… 1979 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 872 KB

A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87