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Growth of high mobility epitaxial thin films of Pb0.8Sn0.2Te by vacuum evaporation

✍ Scribed by A.L. Dawar; Partap Kumar; S.K. Paradkar; O.P. Taneja; P.C. Mathur


Publisher
Elsevier Science
Year
1982
Weight
872 KB
Volume
22
Category
Article
ISSN
0020-0891

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Cd 0.96 Zn 0.04 Te thin films are deposited onto well cleaned glass substrates (Corning 7059) kept at room temperature by vacuum evaporation and the films are annealed at 423 K. Rutherford Backscattering Spectrometry and X-ray diffraction techniques are used to determine the thickness, composition a