Optimisation of the electrochemical bath for growing device-quality CuInSe2 thin films

✍ Scribed by A. M. Fernández

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 275 KB
• Volume: 8
• Category: Article
• ISSN: 1616-301X
• DOI: 10.1002/(sici)1099-0712(199801/02)8:1<1::aid-amo320>3.0.co;2-n

✦ Synopsis

The electrochemical bath used for growing device-quality CIS (CuInSe 2 ) thin films by co-deposition as well as layer-by-layer (LBL) deposition was characterised and optimised with respect to the film properties. The bath composition was varied by changing the Cu, In and Se ion concentrations in specific ratios in both co-deposition and LBL deposition. The film properties were analysed using techniques such as SEM (scanning electron microscopy), EPMA (electron probe microanalysis), AES (Auger electron spectroscopy) and XRD (X-ray diffraction). The structural, morphological and compositional properties of the films were characterised and their variation is attributed to the bath composition and growth conditions. *