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The effect of a continuous etch on the growth rate and morphology of InP prepared by the vapor phase epitaxial-hydride method

✍ Scribed by Thomas E. Erstfeld; Kenneth P. Quinlan

Book ID
112823080
Publisher
Springer US
Year
1982
Tongue
English
Weight
703 KB
Volume
11
Category
Article
ISSN
0361-5235

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## Abstract It has been proved that the dependence of the growth rate __V__ of a LPE GaAs layer on the relative supersaturation Οƒ of the solution at the interphase boundary can be determined on the basis of growth rate measurements of this layer in the case when crystallization is controlled by the