𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The dependence of AlGaAs/GaAs MODFET isolation on material and device structure

✍ Scribed by A. Ezis; D.W. Langer; C.W. Tu

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
480 KB
Volume
30
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Optical studies of -centers in GaAs/AlGa
Optical studies of -centers in GaAs/AlGaAs quantum wells. Energy structure of the isolated centers, and their collective behavior
✍ P.V. Petrov; Yu.L. Ivanov; V.E. Sedov; N.I. Sablina; N.S. Averkiev πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 172 KB

We report measurements of photoluminescence (PL) spectra due to A ΓΎ -centers in GaAs/AlGaAs quantum well (QW). We observe temperature and pump dependence of the PL spectra as well as polarized PL spectra taken under an applied magnetic field and uniaxial stress. It was shown that holehole exchange i

Enhancement of the 2DEG density in AlGaA
Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates
✍ S. Rekaya; L. Sfaxi; L. BouzaΓ―ene; H. Maaref; C. Bru-Chevallier πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 439 KB

The pseudomorphic high electron mobility transistor (P-HEMT) structure materials Al 0.33 Ga 0.7 As/In 0.1 Ga 0.9 As/GaAs have been grown by molecular beam epitaxy (MBE) on (311)A and (111)A GaAs substrates. The epitaxy of strain heterostructure on high index GaAs substrate has led to new growth phen