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On the profile of temperature dependent electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures at various frequencies

✍ Scribed by M. Gökçen; H. Altuntaş


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
233 KB
Volume
404
Category
Article
ISSN
0921-4526

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The frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/x-V) characteristics of the metal-ferroelectricinsulator-semiconductor (Au/Bi 4 Ti 3 O 12 /SiO 2 /n-Si) structures (MFIS) were investigated by considering series resistance (R s ) and surface state effects in the frequency