Frequency and gate voltage effects on the dielectric properties of Au/SiO2/n-Si structures
✍ Scribed by İlbilge Dökme; Şemsettin Altındal; Muharrem Gökçen
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 295 KB
- Volume
- 85
- Category
- Article
- ISSN
- 0167-9317
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📜 SIMILAR VOLUMES
The frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/x-V) characteristics of the metal-ferroelectricinsulator-semiconductor (Au/Bi 4 Ti 3 O 12 /SiO 2 /n-Si) structures (MFIS) were investigated by considering series resistance (R s ) and surface state effects in the frequency
The effects of b-ray irradiation on the electrical characteristics of Au/SiO 2 /n-Si (MOS) structures have been investigated using capacitance-voltage (C-V) and conductance-voltage (G/x-V) measurements. The MOS structures were irradiated with beta rays at doses up to 30 kGy. The C-V and G/x-V charac