The defect-related photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 films
β Scribed by J.H Son; H.B Kim; C.N Whang; K.H Chae
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 185 KB
- Volume
- 233
- Category
- Article
- ISSN
- 0169-4332
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π SIMILAR VOLUMES
Silicon ions were implanted into SiO 2 thin films with various doses and energies. For the films implanted with various ion doses the photoluminescence (PL) intensity of 470 nm firstly increased with the increase of Si ion dose, which is similar to the variation trend of displacement per atom (DPA)
Silicon nanocrystals (nc-Si) embedded in SiO 2 glassy mixture have been prepared on glass substrates and silicon and germanium wafers by r.f. co-sputtering and post-annealing in a vacuum. Using Raman spectrometry, photoluminescence and electrical conductivity measurements, we have investigated the s