Raman scattering and room-temperature visible photoluminescence from Si nanocrystals embedded in SiO2 thin films
✍ Scribed by Wang, Yinyue; Gong, Hengxiang; Yang, Yinhu; Guo, Yongping; Gan, Runjin
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 132 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0142-2421
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✦ Synopsis
Silicon nanocrystals (nc-Si) embedded in SiO 2 glassy mixture have been prepared on glass substrates and silicon and germanium wafers by r.f. co-sputtering and post-annealing in a vacuum. Using Raman spectrometry, photoluminescence and electrical conductivity measurements, we have investigated the structures and the optical properties of the Si/SiO 2 composite films. The results show that Si nanocrystals could be formed in Si/SiO 2 composite films by thermal annealing. The growth of nc-Si is associated with annealing temperature and silicon content. As the size of nc-Si reaches 5 nm, the intensity of photoluminescence at room temperature is at a maximum and the emitting photon energy is 2.15 eV.