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The change of transport mechanism in μc-Si:H films induced by H2-diluted silane plasma

✍ Scribed by Shaoyun Huang; Li Wang; Gautam Ganguly; Jun Xu; Xinfan Huang; Akihisa Matsuda; Kunji Chen

Book ID
117144424
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
145 KB
Volume
266-269
Category
Article
ISSN
0022-3093

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✍ J. M. M. de Nijs; R. G. K. M. Aarts 📂 Article 📅 1991 🏛 John Wiley and Sons 🌐 English ⚖ 699 KB

## Abstract The overgrowth of an In~2~O~3~ layer by a μc‐Si:H layer, deposited by means of plasma‐enhanced chemical vapour deposition, will inflict the reduction of the In~2~O~3~. AES is combination with Ar^+^ depth profiling is used for the study of the interfacial deterioration that takes place.