𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Study of the reduced In2O3/μc-Si:H interface by means of factor analysis

✍ Scribed by J. M. M. de Nijs; R. G. K. M. Aarts

Book ID
104592778
Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
699 KB
Volume
17
Category
Article
ISSN
0142-2421

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

The overgrowth of an In~2~O~3~ layer by a μc‐Si:H layer, deposited by means of plasma‐enhanced chemical vapour deposition, will inflict the reduction of the In~2~O~3~. AES is combination with Ar^+^ depth profiling is used for the study of the interfacial deterioration that takes place. The results of a factor analysis study after reduction of the In~2~O~3~ are presented.

📜 SIMILAR VOLUMES

Synthesis and Characterization of Osmium
Synthesis and Characterization of Osmium-Containing Silsesquioxanes: High-Yield Routes to {Os 3 (CO) 10 (μ-H)[(μ-O)Si 7 O 10 ( c -C 6 H 11 ) 7 ]} and the New Clusters {Os 3 (CO) 10 (μ-H)[(μ-O)Si 7 O 9 (OH) 2 ( c -C 6 H 11 ) 7 ]}, {[Os 3 (CO) 10 (μ-H)] 2 (μ-O) 2 Si 7 O 9 (OH)( c -C 6 H 11 ) 7 }, {Os 3 (CO) 10 (μ-H)[(μ-O)Si 8 O 11 (OH)( c -C 6 H 11 ) 8 ]}, and {[Os 3 (CO) 10 (μ-H)] 2 (μ-O) 2 Si 8 O <sub
✍ Lucenti, Elena; Feher, Frank J.; Ziller, Joseph W. 📂 Article 📅 2007 🏛 American Chemical Society 🌐 English ⚖ 262 KB