𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Temperature scaling of CMOS circuit power consumption

✍ Scribed by Victor Sverdlov; Yehuda Naveh; Konstantin Likharev


Book ID
104428636
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
85 KB
Volume
18
Category
Article
ISSN
1386-9477

No coin nor oath required. For personal study only.

✦ Synopsis


We have analyzed fundamental physical limitations on power consumption of prospective semiconductor digital integrated circuits based on nanoscale silicon MOSFETs, using simple models of these devices and power dissipation. Results show that the temperature dependence of the power is determined by circuit speed requirements. For high-speed operation, both power P and power supply voltage VDD saturate when T is reduced below approximately 100 K. In the low-speed limit, P scales as T 2 , while VDD drops linearly with T . However, thermal uctuations may alter this scaling, leading to P Λ™T and VDD Λ™T 1=2 , at low temperatures and/or large circuit densities. We compare this scaling with that of superconductor RSFQ logic.


πŸ“œ SIMILAR VOLUMES


Multi-Voltage CMOS Circuit Design (Kursu
✍ Kursun, Volkan; Friedman, Eby G. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley & Sons, Ltd 🌐 English βš– 662 KB

This book presents an in-depth treatment of various power reduction and speed enhancement techniques based on multiple supply and threshold voltages. A detailed discussion of the sources of power consumption in CMOS circuits will be provided whilst focusing primarily on identifying the mechanisms by

Standby power consumption estimation by
✍ Paulo F. Butzen; Leomar S. da Rosa Jr; Erasmo J.D. Chiappetta Filho; AndrΓ© I. Re πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 797 KB

Leakage currents are gaining importance as design parameters in nanometer CMOS technologies. A novel leakage current estimation method, which takes into account the dependency of leakage mechanisms, is proposed for general CMOS complex gates, including non-series-parallel transistor arrangements, no