This book presents an in-depth treatment of various power reduction and speed enhancement techniques based on multiple supply and threshold voltages. A detailed discussion of the sources of power consumption in CMOS circuits will be provided whilst focusing primarily on identifying the mechanisms by
Temperature scaling of CMOS circuit power consumption
β Scribed by Victor Sverdlov; Yehuda Naveh; Konstantin Likharev
- Book ID
- 104428636
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 85 KB
- Volume
- 18
- Category
- Article
- ISSN
- 1386-9477
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β¦ Synopsis
We have analyzed fundamental physical limitations on power consumption of prospective semiconductor digital integrated circuits based on nanoscale silicon MOSFETs, using simple models of these devices and power dissipation. Results show that the temperature dependence of the power is determined by circuit speed requirements. For high-speed operation, both power P and power supply voltage VDD saturate when T is reduced below approximately 100 K. In the low-speed limit, P scales as T 2 , while VDD drops linearly with T . However, thermal uctuations may alter this scaling, leading to P ΛT and VDD ΛT 1=2 , at low temperatures and/or large circuit densities. We compare this scaling with that of superconductor RSFQ logic.
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