Standby power consumption estimation by interacting leakage current mechanisms in nanoscaled CMOS digital circuits
✍ Scribed by Paulo F. Butzen; Leomar S. da Rosa Jr; Erasmo J.D. Chiappetta Filho; André I. Reis; Renato P. Ribas
- Book ID
- 104053528
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 797 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0026-2692
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✦ Synopsis
Leakage currents are gaining importance as design parameters in nanometer CMOS technologies. A novel leakage current estimation method, which takes into account the dependency of leakage mechanisms, is proposed for general CMOS complex gates, including non-series-parallel transistor arrangements, not covered by existing approaches. The main contribution of this work is a fast, accurate, and systematic procedure to determine the potentials at transistor network nodes for calculating standby static currents. The proposed method has been validated through electrical simulations, showing an error smaller than 7% and an 80 Â speed-up when comparing to electrical simulation.