Electron trapping and paramagnetic defec
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S.P. Hotaling; Homer Antoniadis; E.A. Schiff
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Article
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1989
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Elsevier Science
โ 335 KB
Electron deep-trapping mobility-lifetime (/~r) products were measured in a series of hydrogenated amorphous silicon (a-Si:H) specimens using the transient photocurrent charge-collection technique. A logarithmic dependence of the resulting /~r estimate upon the collection time was observed. The corre