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Defect density and structure of hydrogenated amorphous silicon-sulfur alloys

โœ Scribed by S. Aljishi; M. Stutzmann; Shu Jin; C. Herrero; S. Al-Dallal; M. Hammam; S.M. Al-Alawi


Book ID
115987077
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
189 KB
Volume
114
Category
Article
ISSN
0022-3093

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Electron deep-trapping mobility-lifetime (/~r) products were measured in a series of hydrogenated amorphous silicon (a-Si:H) specimens using the transient photocurrent charge-collection technique. A logarithmic dependence of the resulting /~r estimate upon the collection time was observed. The corre