β Scribed by S.P. Hotaling; Homer Antoniadis; E.A. Schiff
No coin nor oath required. For personal study only.
Electron deep-trapping mobility-lifetime (/~r) products were measured in a series of hydrogenated amorphous silicon (a-Si:H) specimens using the transient photocurrent charge-collection technique. A logarithmic dependence of the resulting /~r estimate upon the collection time was observed. The correlation of/~r with independent electron spin resonance spectroscopy determinations of the D o defect density AT, was studied. The data are roughly distributed as /~r ~ N, -~ for specimens prepared from pure silane at varying deposition temperatures. The correlation supports the proposal of Street that the predominant deep trap for electrons is the D o defect.
π SIMILAR VOLUMES
Using an empirical model for the density of states functions associated with hydrogenated amorphous silicon, with defect states taken into account, we examine how the distributions of such states shape the optical response of this material. The contributions to this response attributable to the vari