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Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels

✍ Scribed by D. Osintsev; V. Sverdlov; Z. Stanojević; A. Makarov; S. Selberherr

Book ID: 113916089
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 464 KB
Volume: 71
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2011.10.015

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