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Temperature dependence of SiO2 film growth with plasma-enhanced atomic layer deposition

✍ Scribed by Akiko Kobayashi; Naoto Tsuji; Atsuki Fukazawa; Nobuyoshi Kobayashi

Book ID
113937565
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
706 KB
Volume
520
Category
Article
ISSN
0040-6090

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Structural properties of AlN films depos
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## Abstract Crystalline aluminum nitride (AlN) films have been prepared by plasma‐enhanced atomic layer deposition (PEALD) within the temperature range from 100 to 500 °C. A self‐limiting, constant growth rate per cycle temperature window (100–200 °C) was established which is the major characterist