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Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition

✍ Scribed by Kwon, Se-Hun; Kwon, Oh-Kyum; Kim, Jin-Hyock; Oh, Heung-Ryong; Kim, Kwang-Ho; Kang, Sang-Won

Book ID
127263543
Publisher
The Electrochemical Society
Year
2008
Tongue
English
Weight
544 KB
Volume
155
Category
Article
ISSN
0013-4651

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## Abstract Crystalline aluminum nitride (AlN) films have been prepared by plasma‐enhanced atomic layer deposition (PEALD) within the temperature range from 100 to 500 °C. A self‐limiting, constant growth rate per cycle temperature window (100–200 °C) was established which is the major characterist