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Temperature Dependence of Hysteresis Effect in Partially Depleted Silicon-on-Insulator MOSFETs

โœ Scribed by Luo, Jiexin; Chen, Jing; Zhuo, Jianhua; Wu, Qingqing; Chai, Zhan; Wang, Xi


Book ID
120209686
Publisher
IEEE
Year
2012
Tongue
English
Weight
805 KB
Volume
12
Category
Article
ISSN
1530-4388

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Substrate current characteristics in par
โœ E. Simoen; C. Claeys ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 652 KB

This paper reports on the substrate current (1,) characteristics of partially depleted silicon-on-insulator (SOI) n-MOSFETs at 4.2, 77 and 300 K. It is demonstrated that, to a good approximation, the same model as for bulk MOSFETs can be used to describe the gate and drain voltage dependence of le i