✦ LIBER ✦
Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13 μm partially depleted silicon-on-insulator n-MOSFETs
✍ Scribed by Jianhua Zhou; Albert Pang; Steam Cao; Shichang Zou
- Book ID
- 113800463
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 787 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0026-2714
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