Temperature dependence of direct transition energies in - epitaxial films on Si(111) substrate

✍ Scribed by K. Noda; Y. Terai; K. Yoneda; Y. Fujiwara

• Publisher: Elsevier
• Year: 2011
• Tongue: English
• Weight: 306 KB
• Volume: 11
• Category: Article
• ISSN: 1875-3892
• DOI: 10.1016/j.phpro.2011.01.024

✦ Synopsis

Temperature dependence of direct transition energies (E g ) was investigated in -FeSi 2 epitaxial films on Si(111) substrate. The lattice volume of the epitaxial films was reduced as the annealing temperature (T a ) increased. In photoreflectance measurements, the samples annealed at higher T a showed a larger temperature dependence of E g . These results revealed that the temperature dependence of E g depended on the lattice deformation by the thermal annealing. The fact supports the band gap modifications by the lattice deformation.