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Molecular beam epitaxy of - films on Si(111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC

โœ Scribed by H. Kawakami; M. Suzuno; K. Akutsu; J. Chen; Y. Fuxing; T. Sekiguchi; T. Suemasu


Publisher
Elsevier
Year
2011
Tongue
English
Weight
401 KB
Volume
11
Category
Article
ISSN
1875-3892

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