Rhombohedral distortion of EuS epitaxial films on Si(111) substrates
โ Scribed by J. Hauck; K. Bickmann
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 506 KB
- Volume
- 151
- Category
- Article
- ISSN
- 0040-6090
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๐ SIMILAR VOLUMES
Temperature dependence of direct transition energies (E g ) was investigated in -FeSi 2 epitaxial films on Si(111) substrate. The lattice volume of the epitaxial films was reduced as the annealing temperature (T a ) increased. In photoreflectance measurements, the samples annealed at higher T a show
Molecular beam epitaxy was used to grow MnF 2 films on a Si(111) substrate with a thin CaF 2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inherited from CaF 2 . The MnF 2 film is coherent to the substrate and has an i