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Temperature dependence of boron surface segregation in Si molecular beam epitaxial growth on the Si(111) √3 × √3-B surface

✍ Scribed by Yoshinao Kumagai; Kouichi Ishimoto; Ryosuke Mori; Fumio Hasegawa


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
404 KB
Volume
150
Category
Article
ISSN
0022-0248

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