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Temperature Dependence of Defects in Hydrogen-Implanted Silicon Characterized by Positron and Ion-Beam Analyses

✍ Scribed by A. Kinomura; R. Suzuki; T. Ohdaira; M. Muramatsu; C. He; N. Oshima; T. Matsumoto; Y. Horino

No coin nor oath required. For personal study only.

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