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Temperature and thermal characteristics of InGaN/GaN vertical light-emitting diodes on electroplated copper

✍ Scribed by Lee, D H; Lee, H K; Yu, J S; Bae, S J; Choi, J H; Kim, D H; Ju, I C; Song, K M; Kim, J M; Shin, C S

Book ID
120074610
Publisher
Institute of Physics
Year
2011
Tongue
English
Weight
743 KB
Volume
26
Category
Article
ISSN
0268-1242

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## Abstract InGaN light‐emitting diodes (LEDs) on GaN substrates with low threading dislocation densities (TDDs) were fabricated, and the characteristics of the LEDs were compared with those on sapphire substrates. LEDs with 3 nm‐thick‐quantum‐wells (QWs) grown on GaN as well as on sapphire substra