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Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on Silicon

✍ Scribed by Kim, Jaekyun; Kim, Jun-Youn; Tak, Youngjo; Kim, Joosung; Hong, Hyun-Gi; Yang, Moonseung; Chae, Suhee; Park, Junghoon; Park, Youngsoo; Chung, U-In

Book ID
124159476
Publisher
IEEE
Year
2012
Tongue
English
Weight
282 KB
Volume
33
Category
Article
ISSN
0741-3106

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## Abstract InGaN light‐emitting diodes (LEDs) on GaN substrates with low threading dislocation densities (TDDs) were fabricated, and the characteristics of the LEDs were compared with those on sapphire substrates. LEDs with 3 nm‐thick‐quantum‐wells (QWs) grown on GaN as well as on sapphire substra