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Carrier lifetimes in green emitting InGaN/GaN disks-in-nanowire and characteristics of green light emitting diodes

โœ Scribed by Jahangir, Shafat; Banerjee, Animesh; Bhattacharya, Pallab


Book ID
120445398
Publisher
John Wiley and Sons
Year
2013
Tongue
English
Weight
608 KB
Volume
10
Category
Article
ISSN
1862-6351

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High performance tunnel injection InGaN/
โœ Meng Zhang; Animesh Banerjee; Pallab Bhattacharya ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 382 KB

InGaN/GaN self-organized quantum dots with density of (2 ร€ 5) ร‚ 10 10 cm ร€ 2 , internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristic