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Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes

✍ Scribed by Kim, Kyu-Sang; Han, Dong-Pyo; Kim, Hyun-Sung; Shim, Jong-In


Book ID
121741657
Publisher
American Institute of Physics
Year
2014
Tongue
English
Weight
1020 KB
Volume
104
Category
Article
ISSN
0003-6951

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## Abstract We studied the nonthermal mechanism of quantum efficiency (QE) roll‐off in InGaN‐based multiple‐quantum‐well LEDs on sapphire and bulk GaN substrates with In content ranging from 1% to 28%. Both the efficiency evolution and peak energy shift appear to be strongly dependent on the In con