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Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

โœ Scribed by Mukai, Takashi; Yamada, Motokazu; Nakamura, Shuji


Book ID
125485592
Publisher
Institute of Pure and Applied Physics
Year
1999
Tongue
English
Weight
223 KB
Volume
38
Category
Article
ISSN
0021-4922

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Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well