Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures
β Scribed by Barletta, Philip T.; Acar Berkman, E.; Moody, Baxter F.; El-Masry, Nadia A.; Emara, Ahmed M.; Reed, Mason J.; Bedair, S. M.
- Book ID
- 120825991
- Publisher
- American Institute of Physics
- Year
- 2007
- Tongue
- English
- Weight
- 497 KB
- Volume
- 90
- Category
- Article
- ISSN
- 0003-6951
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π SIMILAR VOLUMES
Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well
## Abstract Transmission experiments for a local area network (LAN) using blueβlightβemitting diodes (LEDs) with InGaN/GaN multiple quantum well (MQW) and plastic optical fibers (POFs) have been conducted. Audio analog signals have been transmitted up to 1800 kHz, which corresponds to an optical 1.