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Temperature and Pressure Dependence of the Oxygen Exchange at the SiO 2 −Si Interface, O 2 ↔ SiO 2 , during Dry Thermal Oxidation of Silicon

✍ Scribed by Åkermark, T.; Ganem, J.-J.; Trimaille, I.; Vickridge, I.; Rigo, S.

Book ID: 126188809
Publisher: American Chemical Society
Year: 1999
Tongue: English
Weight: 62 KB
Volume: 103
Category: Article
ISSN: 0022-3654
DOI: 10.1021/jp991788e

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