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Temperature and annealing effects on InAs nanowire MOSFETs

✍ Scribed by S. Johansson; S. Gorji Ghalamestani; M. Borg; E. Lind; L.E. Wernersson

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
365 KB
Volume
88
Category
Article
ISSN
0167-9317

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## Abstract Here, direct correlation between the microstructure of InAs nanowires (NWs) and their electronic transport behavior at room temperature is reported. Pure zinc blende (ZB) InAs NWs grown on SiO~2~/Si substrates are characterized by a rotational twin along their growth‐direction axis whil