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Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels

✍ Scribed by Seonghyun Kim; Minseok Jo; Seungjae Jung; Hyejung Choi; Joonmyoung Lee; Man Chang; Chunhum Cho; Hyunsang Hwang


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
534 KB
Volume
88
Category
Article
ISSN
0167-9317

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