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Temperature analysis for the point-cell source in the vapor deposition process

โœ Scribed by Choi, Jongwook ;Kim, Sungcho ;Jung, Hun

Book ID
105678286
Publisher
Springer-Verlag
Year
2004
Tongue
Korean
Weight
630 KB
Volume
18
Category
Article
ISSN
1226-4865

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A system has been developed that permits the deposition of device quality epitaxial silicon films at low temperatures. Using this system, epitaxial layers" have been grown that have a minoritycarrier lifetime of about 0.5 ms; the highest vahw reported for any low temperature silicon epitaxial proces