We report a low temperature photoluminescence study on two identical Al 0.13 Ga 0.87 N/GaN single quantum wells (QWs), which are pseudomorphically grown on either a GaN or an AlGaN buffer layer. The red shift of the QW emission due to the quantum confined Stark effect, is found to be strongest in th
✦ LIBER ✦
TEM study of defects in AlxGa1−xN layers with different polarity
✍ Scribed by A.V. Tikhonov; T.V. Malin; K.S. Zhuravlev; L. Dobos; B. Pecz
- Book ID
- 116630066
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 636 KB
- Volume
- 338
- Category
- Article
- ISSN
- 0022-0248
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