TEM observation on the microstructure of Co doped C films

✍ Scribed by Mi, W. B. ;Li, Z. Q. ;Wu, P. ;Jiang, E. Y. ;Bai, H. L.

• Book ID: 105363011
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 525 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200420072

✦ Synopsis

Abstract

Co doped C films with different Co volume fraction x~v~ were fabricated using facing‐target sputtering at room temperature. The as‐deposited films are composed of ∼2 nm amorphous Co granules dispersed in a‐C matrix, and their morphology is composition independent. The graphitized carbon nanostructure appears in the as‐deposited C films (x~v~ = 43) after being irradiated by electron beam for several minutes. Annealing at 300–450 °C causes the crystallization of amorphous Co followed by an increase of grain size. The constrictions arising from the structural environment result in the coexistence of the hcp and fcc Co phases at temperatures higher than the phase transformation point of 425 °C. Annealed at 650 °C, crystalline Co particles transform into hcp structure with stacking faults and amorphous C graphitizes. The graphite (002) lattice in the annealed C films preferentially grows up on the surface of Co particles. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)